IKW20N65ET7XKSA1

Infineon Technologies
726-IKW20N65ET7XKSA1
IKW20N65ET7XKSA1

Mfr.:

Description:
IGBTs 650 V, 20 A IGBT with anti-parallel diode in TO-247 package

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In Stock: 90

Stock:
90 Can Dispatch Immediately
Factory Lead Time:
36 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp90.813 Rp90.813
Rp59.441 Rp594.410
Rp44.397 Rp4.439.700
Rp37.059 Rp17.788.320

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.35 V
- 20 V, 20 V
40 A
136 W
- 40 C
+ 175 C
IGBT7 T7
Tube
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: IKW20N65ET7 SP005348286
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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
China
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

Low Loss Duopack IGBTs

Infineon Technologies Low Loss Duopack IGBTs offer a robust humidity design with Trenchstop™ and Fieldstop™ technology. They feature a very soft, fast-recovery anti-parallel diode, short tail current, and very low VCEsat.