ASA004V065A4

APC-E
896-ASA004V065A4
ASA004V065A4

Mfr.:

Description:
SiC Schottky Diodes 650V 4A, TO220-2L, Industrial Grade

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 996

Stock:
996 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp30.454 Rp30.454
Rp19.447 Rp194.470
Rp12.861 Rp1.286.100
Rp10.549 Rp5.274.500
Rp9.228 Rp9.228.000
Rp8.494 Rp21.235.000
Rp7.815 Rp39.075.000
Rp7.614 Rp190.350.000

Product Attribute Attribute Value Select Attribute
APC-E
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220-2
Single
4 A
650 V
32 A
+ 175 C
Tube
Brand: APC-E
Moisture Sensitive: Yes
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
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Attributes selected: 0

CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

APC-E Silicon Carbide (SiC) Schottky Barrier Diodes are high-performance semiconductors for power applications. The APC-E SiC Schottky Barrier Diodes offer superior power handling due to high voltage and current ratings, enabling high frequency and high-temperature operation, which boosts power density, efficiency, and system compactness. These diodes feature a reduced capacitive charge (QC), which minimizes reverse recovery loss, aiding fast switching. These devices also maintain consistent performance over a broad temperature range, simplifying system design. Merits include low VF, high surge current, or balanced performance, tailored for PFC, solar inverters, onboard chargers, and EV charging.