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ALD210800ASCL

Name: Advanced Linear Devices ALD210800ASCL
Brand: Advanced Linear Devices
SKU: 585-ALD210800ASCL
Price: 212997 IDR
Availability: InStock

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Mouser No:

585-ALD210800ASCL

Mfr. No:

ALD210800ASCL

Mfr.:

Advanced Linear Devices

Description:

MOSFETs PREC N-CHAN EPAD CMOS MOSFET ARRAY

Datasheet:

ALD210800ASCL Datasheet (PDF)

ECAD Model:

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In Stock: 19

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp212.997	Rp212.997
	Rp139.980	Rp1.399.800
	Rp107.508	Rp10.750.800
	Rp104.572	Rp52.286.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Advanced Linear Devices
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Transistor Polarity:	N-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	10.6 V
Id - Continuous Drain Current:	80 mA
Rds On - Drain-Source Resistance:	25 Ohms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	20 mV
Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 70 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Advanced Linear Devices
Configuration:	Quad
Product Type:	MOSFETs
Series:	ALD210800A
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	4 N-Channel
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	10 ns
Unit Weight:	666 mg

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Datasheet

ALD210800ASCL Datasheet (PDF)

Compliance Codes

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8542390090
JPHTS:: 8541210101
KRHTS:: 8541219000
TARIC:: 8542399000
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays - INACTIVE

Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays are precision matched at the factory using ALD's proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110800A/ALD110800 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210800/ALD210800A features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels.
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