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AS4C128M16D3LC-12BANTR

Name: Alliance Memory AS4C128M16D3LC-12BANTR
Brand: Alliance Memory
SKU: 913-4C12816D3LC12BAT
Price: 334081 IDR
Availability: OutOfStock

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Mouser No:

913-4C12816D3LC12BAT

Mfr. No:

AS4C128M16D3LC-12BANTR

Mfr.:

Alliance Memory

Description:

DRAM DDR3, 2G, 1.35V, 96-BALL FBGA, 800MHZ, AUTO TEMP - Tape & Reel

Datasheet:

AS4C128M16D3LC-12BANTR Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Alliance Memory AS4C128M16D3LC-12BANTR

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 8 Weeks Estimated factory production time.

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Minimum: 1500 Multiples: 1500

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1500)
	Rp334.081	Rp501.121.500

Alternative Packaging

Mfr. Part No.:

AS4C128M16D3LC-12BAN

Packaging:

Tray

Availability:

In Stock

Price:

Rp472.960

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Alliance Memory
Product Category:	DRAM
RoHS:
Type:	SDRAM - DDR3L
Memory Size:	2 Gbit
Data Bus Width:	16 bit
Maximum Clock Frequency:	800 MHz
Package/Case:	FBGA-96
Organisation:	128 M x 16
Access Time:	225 ps
Supply Voltage - Min:	1.283 V
Supply Voltage - Max:	1.45 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Series:	AS4C128M16D3LC-12
Packaging:	Reel
Brand:	Alliance Memory
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	1500
Subcategory:	Memory & Data Storage
Supply Current - Max:	96 mA

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Datasheet

AS4C128M16D3LC-12BANTR Datasheet (PDF)

Compliance Codes

USHTS:: 8542320036
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Taiwan
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.