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AS4C64M16D3B-12BAN

Name: Alliance Memory AS4C64M16D3B-12BAN
Brand: Alliance Memory
SKU: 913-A4C64M16D3B12BAN
Price: 259963 IDR
Availability: OutOfStock

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See Product Specifications

Mouser No:

913-A4C64M16D3B12BAN

Mfr. No:

AS4C64M16D3B-12BAN

Mfr.:

Alliance Memory

Description:

DRAM DDR3, 1G, 64M x 16, 1.5V, 96-ball FBGA, 800MHz, (B-die), Automotive Temp - Tray

Datasheet:

AS4C64M16D3B-12BAN Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Alliance Memory AS4C64M16D3B-12BAN

Availability

Stock:: 0

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On Order:: 124

Expected 19/06/2026
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp259.963	Rp259.963
	Rp241.433	Rp2.414.330
	Rp234.095	Rp5.852.375
	Rp228.408	Rp11.420.400
	Rp222.904	Rp22.290.400
	Rp215.566	Rp40.957.540
	Rp210.062	Rp119.735.340
1.140	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Alliance Memory
Product Category:	DRAM
RoHS:
Type:	SDRAM - DDR3
Memory Size:	1 Gbit
Data Bus Width:	16 bit
Maximum Clock Frequency:	800 MHz
Package/Case:	FBGA-96
Organisation:	64 M x 16
Access Time:	20 ns
Supply Voltage - Min:	1.425 V
Supply Voltage - Max:	1.575 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Series:	AS4C64M16D3B
Packaging:	Tray
Brand:	Alliance Memory
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	190
Subcategory:	Memory & Data Storage
Supply Current - Max:	87 mA
Unit Weight:	3,698 g

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Filter Document:

Datasheet

AS4C64M16D3B-12BAN Datasheet (PDF)

REACH Declaration (PDF)

Compliance Codes

CNHTS:: 8542329000
CAHTS:: 8542320020
USHTS:: 8542320032
MXHTS:: 8542320201
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Taiwan
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.