AF54RHC132ENT-R

Apogee Semiconductor
444-AF54RHC132ENT-R
AF54RHC132ENT-R

Mfr.:

Description:
Logic Gates GEO Quad Schmitt 2-input NAND E-Grade NiPdAu TSSOP14 Tape and Reel

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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This product may require additional documentation to export from the United States.

In Stock: 65

Stock:
65 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp2.248.302 Rp2.248.302
Rp1.880.282 Rp18.802.820
Rp1.732.963 Rp43.324.075
Rp1.717.736 Rp171.773.600
Full Reel (Order in multiples of 250)
Rp1.678.476 Rp419.619.000

Product Attribute Attribute Value Select Attribute
Apogee Semiconductor
Product Category: Logic Gates
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
NAND
4 Gate
AF54RHC
8 Input
TSSOP-14
4 Output
24 mA
- 24 mA
38 ns
1.65 V
5.5 V
- 55 C
+ 125 C
SMD/SMT
Reel
Cut Tape
Brand: Apogee Semiconductor
Logic Type: CMOS
Operating Temperature Range: - 55 C to + 125 C
Output Current: 100 mA
Output Voltage: 5.5 V
Product: NAND Gate
Product Type: Logic Gates
Series: AF54RHC132
Factory Pack Quantity: 250
Subcategory: Logic ICs
Tradename: RelBridge
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Attributes selected: 0

Compliance Codes
USHTS:
8542390090
TARIC:
8542319000
MXHTS:
8542399999
ECCN:
9A515.e.1
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

AF54RHC132 Rad-Hard Quad 2-Input NAND Gate

Apogee Semiconductor AF54RHC132 Rad-Hard Quad 2-Input NAND Gate with Schmitt trigger inputs is a member of the AF54RHC logic family. The Schmitt triggers on each input provide hysteresis and allow slow-rising or noisy input signals without any fall time or input rise requirements. This NAND gate is fabricated in a 180nm CMOS process using proprietary radiation-hardening techniques. The AF54RHC132 NAND gate delivers high resiliency to Single-Event Effects (SEE) and 300krad (Si) Total Ionizing Dose (TID). This NAND gate supports class 2 ESD protection (4000V HBM and 500V CDM).