+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

BIDW20N60T

Name: Bourns BIDW20N60T
Brand: Bourns
SKU: 652-BIDW20N60T
Price: 48984 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

652-BIDW20N60T

Mfr. No:

BIDW20N60T

Mfr.:

Bourns

Description:

IGBTs IGBT Discrete 600V, 20A in TO-247

Datasheet:

BIDW20N60T Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Bourns BIDW20N60T

In Stock: 6.978

Stock:: 6.978 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp48.984	Rp48.984
	Rp41.462	Rp24.877.200
	Rp29.721	Rp35.665.200
	Rp28.620	Rp154.548.000
25.200	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Bourns
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.7 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	40 A
Pd - Power Dissipation:	192 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	BID
Packaging:	Tube
Brand:	Bourns
Continuous Collector Current Ic Max:	40 A
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

BIDW20N60T Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.