Name: Bourns BIDW50N65T
Brand: Bourns
SKU: 652-BIDW50N65T
Price: 92647 IDR
Availability: InStock

Description:

IGBTs IGBT Discrete 650V, 50A in TO-247

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp92.647	Rp92.647
	Rp52.836	Rp528.360
	Rp46.048	Rp4.604.800
	Rp45.865	Rp27.519.000
	Rp45.682	Rp54.818.400
10.200	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Bourns
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A
Pd - Power Dissipation:	416 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	BID
Packaging:	Tube
Brand:	Bourns
Continuous Collector Current Ic Max:	100 A
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs

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Datasheet

BIDW50N65T Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

Electrification Solutions

Bourns Electrification Solutions feature a comprehensive range of transformers, chokes, diodes, resistors, fuses, transistors, and varistors. These products are designed for systems used in the process of electrification, which is the transition from traditional sources of energy, such as oil and gas, to cleaner and more sustainable forms of energy. Electrification affects how cars are refueled, homes are heated, and industries are powered, with the end goal being a reduction in air pollution and energy waste. One example is a heat pump, which is up to 3x more efficient than a boiler to save on heating bills.

Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.