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MMBT7002KDW

Name: Diotec Semiconductor MMBT7002KDW
Brand: Diotec Semiconductor
SKU: 637-MMBT7002KDW
Price: 4587 IDR
Availability: InStock

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Mouser No:

637-MMBT7002KDW

Mfr. No:

MMBT7002KDW

Mfr.:

Diotec Semiconductor

Description:

MOSFETs MOSFET, SOT-363, 60V, 0.3A, 150C, N

Datasheet:

MMBT7002KDW Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diotec Semiconductor MMBT7002KDW

In Stock: 5.304

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp4.587	Rp4.587
	Rp2.789	Rp27.890
	Rp1.743	Rp174.300
	Rp1.688	Rp844.000
	Rp1.523	Rp1.523.000
Full Reel (Order in multiples of 3000)
	Rp1.082	Rp3.246.000
	Rp642	Rp5.778.000
	Rp587	Rp14.088.000
	Rp514	Rp23.130.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diotec Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT363-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	300 mA
Rds On - Drain-Source Resistance:	3 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	440 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	350 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diotec Semiconductor
Configuration:	Dual
Fall Time:	8 ns
Forward Transconductance - Min:	80 S
Product Type:	MOSFETs
Rise Time:	2.5 ns
Series:	MMBT-MOSFET
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	2.7 ns

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Datasheet

MMBT7002KDW Datasheet (PDF)

Models

Full Material Declaration (PDF)

CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

MMBT7002K N-Channel Enhancement Mode FETs

Diotec Semiconductor MMBT7002K N-Channel Enhancement Mode FETs offer ESD-protected gate fast switching times ideal for signal processing, logic level converter, and driver applications. The MMBT7002K features a 60V drain-source voltage, 20V gate-source voltage, and 350mW power dissipation. The devices are available in a SOT-23 package and operate at an -55C to 150C junction temperature. The Diotec MMBT7002K N-Channel Enhancement Mode FETs are compliant with RoHS, REACH, and conflict minerals.