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IS29GL256-70DLET

Name: ISSI IS29GL256-70DLET
Brand: ISSI
SKU: 870-IS29GL256-70DLET
Price: 204558 IDR
Availability: InStock

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Mouser No:

870-IS29GL256-70DLET

Mfr. No:

IS29GL256-70DLET

Mfr.:

ISSI

Description:

NOR Flash 256M 2.7-3.6V 70ns Parallel NOR I-Temp

Datasheet:

IS29GL256-70DLET Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ISSI IS29GL256-70DLET

In Stock: 213

Stock:: 213 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp204.558	Rp204.558
	Rp190.248	Rp1.902.480
	Rp184.377	Rp4.609.425
	Rp179.974	Rp8.998.700
	Rp175.571	Rp17.557.100

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	NOR Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	BGA-64
Series:	IS29GL256
Memory Size:	256 Mbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	45 mA
Interface Type:	Parallel
Organisation:	32 M x 8/16 M x 16
Data Bus Width:	8 bit/16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Brand:	ISSI
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	70 ns
Factory Pack Quantity:	260
Subcategory:	Memory & Data Storage
Unit Weight:	6,138 g

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Datasheet

IS29GL256-70DLET Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542329090
CAHTS:: 8542320040
USHTS:: 8542320051
TARIC:: 8542326100
MXHTS:: 8542320299
ECCN:: 3A991.b.1.a

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: China

The country is subject to change at the time of shipment.

IS29GL256 Parallel Flash Memory Devices

ISSI IS29GL256 Parallel Flash Memory Devices offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. These memory devices feature a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation. The ISSI IS29GL256 devices thus offer faster effective programming time than standard programming algorithms. These memory devices are ideal for embedded applications that require higher density, better performance, and low power consumption.