IS66WVC2M16ECLL-7010BLI

ISSI
870-WVC2M16EL7010BLI
IS66WVC2M16ECLL-7010BLI

Mfr.:

Description:
SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS

ECAD Model:
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In Stock: 480

Stock:
480 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp138.329 Rp138.329
Rp128.789 Rp1.287.890
Rp124.936 Rp3.123.400
Rp122.001 Rp6.100.050
Rp119.066 Rp11.906.600
Rp112.461 Rp28.115.250
Rp109.526 Rp52.572.480
Rp107.874 Rp103.559.040

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
32 Mbit
2 M x 16
70 ns
Parallel
1.95 V
1.7 V
30 mA
- 40 C
+ 85 C
SMD/SMT
Brand: ISSI
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS66WVC2M16EALL
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
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Attributes selected: 0

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Compliance Codes
CNHTS:
8542320000
CAHTS:
8542320030
USHTS:
8542320041
TARIC:
8542324500
MXHTS:
8542320201
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.