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IXBX50N360HV

Name: IXYS IXBX50N360HV
Brand: IXYS
SKU: 747-IXBX50N360HV
Price: 2560368 IDR
Availability: InStock

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Mouser No:

747-IXBX50N360HV

Mfr. No:

IXBX50N360HV

Mfr.:

IXYS

Description:

IGBTs 3600V/125A Reverse Conducting IGBT

Datasheet:

IXBX50N360HV Datasheet

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In Stock: 448

Stock:: 448 Can Dispatch Immediately

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Factory Lead Time:: 44 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp2.560.368	Rp2.560.368
	Rp2.161.893	Rp21.618.930
120	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247-PLUS-HV-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	3.6 kV
Collector-Emitter Saturation Voltage:	2.9 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	125 A
Pd - Power Dissipation:	660 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	Very High Voltage
Packaging:	Tube
Brand:	IXYS
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	6,600 g

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Datasheet

IXBX50N360HV Datasheet

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Medical Equipment Solutions

Littelfuse Medical Equipment Solutions provide robust designed and quality components needed to help with reliable operating and equipment up-time. These solutions include ventilators, defibrillator, and ultrasounds. Littelfuse Medical Equipment Solutions are ideal for life support systems, patient care equipment, and patient monitoring systems.

High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS High Voltage Series 2500V to 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high-voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode, making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high L_di/dt voltage transients from inflicting damage to the device.