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IXFA76N15T2-TRL

Name: IXYS IXFA76N15T2-TRL
Brand: IXYS
SKU: 747-IXFA76N15T2-TRL
Price: 66413 IDR
Availability: OutOfStock

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Mouser No:

747-IXFA76N15T2-TRL

Mfr. No:

IXFA76N15T2-TRL

Mfr.:

IXYS

Description:

MOSFETs IXFA76N15T2 TRL

Datasheet:

IXFA76N15T2-TRL Datasheet

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 34 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 800 Multiples: 800

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 800)
	Rp66.413	Rp53.130.400

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	76 A
Rds On - Drain-Source Resistance:	22 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	97 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	350 W
Channel Mode:	Enhancement
Tradename:	TrenchT2
Packaging:	Reel
Brand:	IXYS
Configuration:	Single
Fall Time:	14 ns
Forward Transconductance - Min:	50 S
Product Type:	MOSFETs
Rise Time:	19 ns
Series:	TrenchT2
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	4 g

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Datasheet

IXFA76N15T2-TRL Datasheet

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

TrenchT2™ Standard/HiPerFET™ Power MOSFETs

Littelfuse TrenchT2™ Standard and HiPerFET™ Power MOSFETs are enhancement mode, single- or dual-channel MOSFETs offering high current carrying capabilities (up to 600A). These devices feature a low drain-source on resistance (3.5mΩ to 22mΩ) and gate charge (25.5nC to 178nC) within a wide -55°C to +175°C operating temperature range. Available in various compact packages, the TrenchT2 MOSFETs are ideal for low voltage, high current power conversion systems.