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IXFH220N06T3

Name: IXYS IXFH220N06T3
Brand: IXYS
SKU: 747-IXFH220N06T3
Price: 146585 IDR
Availability: OutOfStock

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Mouser No:

747-IXFH220N06T3

Mfr. No:

IXFH220N06T3

Mfr.:

IXYS

Description:

MOSFETs 60V/220A TrenchT3

Datasheet:

IXFH220N06T3 Datasheet

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More Information

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Availability

Stock:: Non-Stocked

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp146.585	Rp146.585
	Rp103.288	Rp1.032.880
	Rp83.291	Rp9.994.920
	Rp74.118	Rp37.800.180
	Rp65.495	Rp66.804.900

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	220 A
Rds On - Drain-Source Resistance:	4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	136 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	440 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	17 ns
Forward Transconductance - Min:	87 S
Product Type:	MOSFETs
Rise Time:	20 ns
Series:	IXF
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	6 g

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Datasheet

IXFH220N06T3 Datasheet

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

60V TrenchT3 HiPerFET Power MOSFETs

IXYS 60V TrenchT3™ HiPerFET™ Power MOSFETs are ultra-low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1mΩ and withstand a junction temperature up to +175°C. The series is also avalanche rated at high avalanche current levels. Due to the high-current carrying capability of the TrenchT3 HiPerFET Power MOSFETs, paralleling multiple devices may not be necessary. This simplifies the power system and improves its reliability at the same time. The fast intrinsic body diode of TrenchT3 HiPerFET MOSFETs helps achieve high efficiency, especially during high-speed switching. IXYS 60V TrenchT3 HiPerFET Power MOSFETs are available in TO-220, TO-263, and TO-247 international standard size packages for design flexibility.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.