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IXFH26N50P

Name: IXYS IXFH26N50P
Brand: IXYS
SKU: 747-IXFH26N50P
Price: 200522 IDR
Availability: InStock

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Mouser No:

747-IXFH26N50P

Mfr. No:

IXFH26N50P

Mfr.:

IXYS

Description:

MOSFETs HiPERFET Id26 BVdass500

Datasheet:

IXFH26N50P Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXFH26N50P

In Stock: 3.402

Stock:: 3.402 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp200.522	Rp200.522
	Rp141.815	Rp1.418.150
	Rp117.965	Rp14.155.800
	Rp105.123	Rp53.612.730
	Rp98.335	Rp100.301.700

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	230 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	60 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	400 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	20 ns
Forward Transconductance - Min:	26 S
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	HiPerFET
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	6 g

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Datasheet

IXFH26N50P Datasheet

PCN

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Compliance Codes

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Korea, Republic of
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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Fuel-Powered/Hybrid Military UAV Systems

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