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IXFN210N30P3

Name: IXYS IXFN210N30P3
Brand: IXYS
SKU: 747-IXFN210N30P3
Price: 842448 IDR
Availability: InStock

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Mouser No:

747-IXFN210N30P3

Mfr. No:

IXFN210N30P3

Mfr.:

IXYS

Description:

MOSFET Modules N-Channel: Power MOSFET w/Fast Diode

Datasheet:

IXFN210N30P3 Datasheet

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In Stock: 680

Stock:: 680 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp842.448	Rp842.448
	Rp633.671	Rp6.336.710
	Rp611.839	Rp61.183.900
500	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	192 A
Rds On - Drain-Source Resistance:	14.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.5 kW
Series:	IXFN210N30
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	13 ns
Product Type:	MOSFET Modules
Rise Time:	25 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	HiperFET
Typical Turn-Off Delay Time:	94 ns
Typical Turn-On Delay Time:	46 ns
Unit Weight:	30 g

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Datasheet

IXFN210N30P3 Datasheet

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Q_g and R_DS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (R_dson), a 14 percent reduction in gate charge (Q_g) and as high as a 20 percent increase in maximum power dissipation (P_d). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.