IXFN38N80Q2

IXYS
747-IXFN38N80Q2
IXFN38N80Q2

Mfr.:

Description:
Discrete Semiconductor Modules 38 Amps 800V 0.22 Rds

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
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Availability

Stock:
Not Available

Pricing (IDR)

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Product Attribute Attribute Value Select Attribute
IXYS
Product Category: Discrete Semiconductor Modules
RoHS:  
Si
- 30 V, + 30 V
Screw Mount
SOT-227-4
- 55 C
+ 150 C
IXFN38N80
Tube
Brand: IXYS
Configuration: Single
Fall Time: 12 ns
Id - Continuous Drain Current: 38 A
Pd - Power Dissipation: 735 W
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 220 mOhms
Rise Time: 16 ns
Factory Pack Quantity: 10
Subcategory: Discrete Semiconductor Modules
Tradename: HiPerFET
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 20 ns
Vds - Drain-Source Breakdown Voltage: 800 V
Unit Weight: 30 g
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Attributes selected: 0

Datasheet

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Compliance Codes
CNHTS:
8541590000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541500000
MXHTS:
85415001
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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