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IXFP4N100P

Name: IXYS IXFP4N100P
Brand: IXYS
SKU: 747-IXFP4N100P
Price: 51002 IDR
Availability: InStock

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Mouser No:

747-IXFP4N100P

Mfr. No:

IXFP4N100P

Mfr.:

IXYS

Description:

MOSFETs 4 Amps 1000V

Datasheet:

IXFP4N100P Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXFP4N100P

Availability

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400 Can Dispatch in 20 Days

Long lead time reported on this product.

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Minimum: 300 Multiples: 50

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp51.002	Rp15.300.600
	Rp44.948	Rp22.474.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1 kV
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	3.3 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	26 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	50 ns
Forward Transconductance - Min:	1.8 S
Product Type:	MOSFETs
Rise Time:	36 ns
Series:	IXFP4N100
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	2 g

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Datasheet

IXFP4N100P Datasheet

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541500000
MXHTS:: 85415001
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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