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IXFP7N100P

Name: IXYS IXFP7N100P
Brand: IXYS
SKU: 747-IXFP7N100P
Price: 168600 IDR
Availability: InStock

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Mouser No:

747-IXFP7N100P

Mfr. No:

IXFP7N100P

Mfr.:

IXYS

Description:

MOSFETs 7 Amps 1000V

Datasheet:

IXFP7N100P Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXFP7N100P

In Stock: 745

Stock:: 745 Can Dispatch Immediately

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Factory Lead Time:: 28 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp168.600	Rp168.600
	Rp105.490	Rp1.054.900
	Rp84.025	Rp8.402.500
	Rp78.704	Rp39.352.000
	Rp76.319	Rp76.319.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1 kV
Id - Continuous Drain Current:	7 A
Rds On - Drain-Source Resistance:	1.9 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 W
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Product Type:	MOSFETs
Series:	IXFP7N100
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	2 g

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Datasheet

IXFP7N100P Datasheet

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Compliance Codes

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.

Fuel-Powered/Hybrid Military UAV Systems

Littelfuse Fuel-Powered/Hybrid Military UAV Systems offer solutions for power conversion and DC bus, power distribution, and charger/ground power. These systems support power conversion and a DC bus with a rectifier diode that converts AC line voltage to DC. The fuel-powered/hybrid military Unmanned Aerial Vehicle (UAV) systems provide TVS diodes, fuses, and MOSFETs for semiconductor switches, surge protection, and rectification. These systems offer AEC-Q/MIL-grade products across various functions. Typical applications include ISR, military, and border surveillance

Commercial & Tactical UAV Systems

Littelfuse Commercial and Tactical UAV Systems offer solutions for Li-Ion battery protection, battery chargers, and power distribution. These systems provide fuses for input protection/overcurrent protection, MOSFETs for semiconductor switching, and TVS diodes for DC output transient/surge protection. The commercial and tactical UAV systems offer battery protection >60V and provide main-pack fault isolation, battery disconnect/power path control (pre-charge support), and branch circuit overcurrent protection. Typical applications include ISR, military, border surveillance, agriculture, delivery/logistics, inspection, and public safety.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.