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IXTA150N15X4-7

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See Product Specifications

Mouser No:

747-IXTA150N15X4-7

Mfr. No:

IXTA150N15X4-7

Mfr.:

IXYS

Description:

MOSFETs DiscMSFT NChUltrJnctn X3Class TO-263D2

Lifecycle:

Obsolete

Datasheet:

IXTA150N15X4-7 Datasheet

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	150 A
Rds On - Drain-Source Resistance:	6.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	105 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	480 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	6 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	X4-Class
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	23 ns
Unit Weight:	4 g

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Datasheet

IXTA150N15X4-7 Datasheet

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Electric Vehicle Charging Solutions

Littelfuse Electric Vehicle (EV) Charging Solutions allow designers to select the ideal solution to ensure their EV charging units are functional and safe. Off-board EV charging stations operate in harsh environments subject to extreme heat and cold, rain, snow and lightning strikes. Littelfuse products protect against these hazards, minimising the risk of faults.

Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low R_DS(on) and low Q_g in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.