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IXTH12N100L

Name: IXYS IXTH12N100L
Brand: IXYS
SKU: 747-IXTH12N100L
Price: 531851 IDR
Availability: InStock

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Mouser No:

747-IXTH12N100L

Mfr. No:

IXTH12N100L

Mfr.:

IXYS

Description:

MOSFETs 12 Amps 1000V 1.3 Ohms Rds

Datasheet:

IXTH12N100L Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXTH12N100L

In Stock: 914

Stock:: 914 Can Dispatch Immediately

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Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp531.851	Rp531.851
	Rp385.266	Rp3.852.660
	Rp340.135	Rp40.816.200

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1 kV
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	1.3 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	155 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	400 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	65 ns
Product Type:	MOSFETs
Rise Time:	55 ns
Series:	IXTH12N100
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	110 ns
Typical Turn-On Delay Time:	30 ns
Unit Weight:	6 g

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Datasheet

IXTH12N100L Datasheet

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541500000
MXHTS:: 85415001
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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Fuel-Powered/Hybrid Military UAV Systems

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Drone Subsystems

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