IXTP120P065T

IXYS
747-IXTP120P065T
IXTP120P065T

Mfr.:

Description:
MOSFETs -120 Amps -65V 0.01 Rds

ECAD Model:
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In Stock: 35

Stock:
35
Can Dispatch Immediately
On Order:
500
Expected 20/07/2026
750
Expected 27/07/2026
Factory Lead Time:
31
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp171.352 Rp171.352
Rp120.166 Rp1.201.660
Rp86.960 Rp8.696.000
Rp77.237 Rp38.618.500

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Through Hole
- 55 C
+ 150 C
IXTP120P065
Brand: IXYS
Channel Mode: Enhancement
Configuration: Single
Fall Time: 21 ns
Id - Continuous Drain Current: 120 A
Number of Channels: 1 Channel
Package/Case: TO-220-3
Packaging: Tube
Pd - Power Dissipation: 298 W
Product Type: MOSFETs
Qg - Gate Charge: 185 nC
Rds On - Drain-Source Resistance: 10 mOhms
Rise Time: 28 ns
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: Si
Tradename: TrenchP
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 38 ns
Typical Turn-On Delay Time: 31 ns
Vds - Drain-Source Breakdown Voltage: 65 V
Vgs - Gate-Source Voltage: - 15 V, 15 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Unit Weight: 2 g
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Compliance Codes
CNHTS:
8541290000
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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