IXTP3N100D2

IXYS
747-IXTP3N100D2
IXTP3N100D2

Mfr.:

Description:
MOSFETs N-CH MOSFETS (D2) 1000V 3A

ECAD Model:
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In Stock: 617

Stock:
617 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp92.280 Rp92.280
Rp64.028 Rp640.280
Rp55.038 Rp5.503.800
Rp48.433 Rp24.216.500
Rp38.343 Rp38.343.000

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
1 kV
3 A
6 Ohms
- 20 V, 20 V
4.5 V
37.5 nC
- 55 C
+ 150 C
125 W
Depletion
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Product Type: MOSFETs
Series: IXTP3N100
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 2 g
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CNHTS:
8541290000
TARIC:
8541900000
CAHTS:
8541900000
USHTS:
8541290065
JPHTS:
8542900006
MXHTS:
8541900299
ECCN:
EAR99

D2 Series N-Channel Depletion Mode Power MOSFETs

IXYS D2 Series 100V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a normally "on" mode, requiring zero turn-on voltage at the gate terminal. IXYS D2 series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously “on," like emergency or burglar alarms.

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