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IXTP3N120

Name: IXYS IXTP3N120
Brand: IXYS
SKU: 747-IXTP3N120
Price: 194468 IDR
Availability: InStock

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Mouser No:

747-IXTP3N120

Mfr. No:

IXTP3N120

Mfr.:

IXYS

Description:

MOSFETs MOSFET Id3 BVdass1200

Datasheet:

IXTP3N120 Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXTP3N120

In Stock: 797

Stock:: 797 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp194.468	Rp194.468
	Rp114.112	Rp1.141.120
	Rp105.123	Rp10.512.300
	Rp103.471	Rp51.735.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	4.5 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	200 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	18 ns
Forward Transconductance - Min:	1.5 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	IXTP3N120
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	2 g

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Datasheet

IXTP3N120 Datasheet

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Compliance Codes

CNHTS:: 8541290000
TARIC:: 8541500000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85415001
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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