BFS 481 H6327

Name: Infineon BFS 481 H6327
Brand: Infineon Technologies
SKU: 726-BFS481H6327
Price: 10457 IDR
Availability: InStock

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Mouser No:

726-BFS481H6327

Mfr. No:

BFS 481 H6327

Mfr.:

Infineon Technologies

Description:

RF Bipolar Transistors RF BIP TRANSISTOR

Datasheet:

BFS 481 H6327 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies BFS 481 H6327

In Stock: 8.104

Stock:: 8.104 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp10.457	Rp10.457
	Rp6.586	Rp65.860
	Rp5.339	Rp533.900
	Rp5.082	Rp2.541.000
	Rp4.880	Rp4.880.000
Full Reel (Order in multiples of 3000)
	Rp4.476	Rp13.428.000
	Rp4.348	Rp26.088.000
	Rp4.275	Rp38.475.000
	Rp4.238	Rp101.712.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFS481
Transistor Type:	Bipolar Power
Technology:	Si
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Product Type:	RF Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors
Part # Aliases:	BFS481H6327XT SP000750462 BFS481H6327XTSA1
Unit Weight:	6,270 mg

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Datasheet

BFS 481 H6327 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210075
JPHTS:: 8541290100
KRHTS:: 8541219000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.