CY14V101QS-SF108XI

Infineon Technologies
727-CY14V101QSSF108X
CY14V101QS-SF108XI

Mfr.:

Description:
NVRAM 1-Mbit (128KX8) Quad SPI nvSRAM

ECAD Model:
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In Stock: 246

Stock:
246 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp309.680 Rp309.680
Rp287.298 Rp2.872.980
Rp278.309 Rp6.957.725
Rp250.056 Rp12.502.800
Rp247.304 Rp113.759.840
920 Quote

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: NVRAM
RoHS:  
SOIC-16
SPI
1 Mbit
128 k x 8
8 bit
3.6 V
2.7 V
33 mA
- 40 C
+ 85 C
CY14V101
Tube
Brand: Infineon Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Pd - Power Dissipation: 1 W
Product Type: NVRAM
Factory Pack Quantity: 460
Subcategory: Memory & Data Storage
Unit Weight: 666 mg
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Attributes selected: 0

CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320071
JPHTS:
854232029
KRHTS:
8542321020
TARIC:
8542329000
MXHTS:
8542320201
ECCN:
3A991.b.2.b

CY14V101 1-Mb Quad SPI nvSRAM

Cypress Semiconductor CY14V101 1-Mbit (128K × 8) Quad SPI nvSRAM couples a 1-Mbit nvSRAM with a QPI interface. The QPI enables writing and reading of the memory in either a single (one I/O channel for one bit per clock cycle), dual (two I/O channels for two bits per clock cycle), or quad (four I/O channels for four bits per clock cycle) mode through the use of specific opcodes. The memory is organised as 128Kbytes each consisting of SRAM and nonvolatile SONOS FLASH Quantum Trap cells. The SRAM provides infinite read and write cycles, while the nonvolatile cells provide storage of data. Data transfers from SRAM to the nonvolatile cells (STORE operation) occur automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile cells (RECALL operation). Users may also initiate the STORE and RECALL operations through SPI instructions.
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INFINEON