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FF17MR12W1M1HB11BPSA1

Name: Infineon FF17MR12W1M1HB11BPSA1
Brand: Infineon Technologies
SKU: 726-FF17MR12W1M1HB11
Price: 1135801 IDR
Availability: InStock

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Mouser No:

726-FF17MR12W1M1HB11

Mfr. No:

FF17MR12W1M1HB11BPSA1

Mfr.:

Infineon Technologies

Description:

Discrete Semiconductor Modules Half-bridge 1200 V module with CoolSiC MOSFET

Datasheet:

FF17MR12W1M1HB11BPSA1 Datasheet (PDF)

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In Stock: 5

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp1.135.801	Rp1.135.801
	Rp849.970	Rp8.499.700
	Rp849.787	Rp101.974.440

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Discrete Semiconductor Modules
RoHS:
Type:	Half Bridge
Technology:	Si
Series:	M1H
Packaging:	Tray
Brand:	Infineon Technologies
Product Type:	Discrete Semiconductor Modules
Factory Pack Quantity:	24
Subcategory:	Discrete Semiconductor Modules
Tradename:	EasyDUAL CoolSiC
Part # Aliases:	FF17MR12W1M1H_B11 SP005634554

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Datasheet

FF17MR12W1M1HB11BPSA1 Datasheet (PDF)

CNHTS:: 8504409100
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

1200V CoolSiC™ Modules

Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.

1200V CoolSiC™ M1H Modules

Infineon Technologies 1200V CoolSiC™ M1H Modules offer EV Charging and other inverter designers opportunities to achieve never-before-seen efficiency and power density levels.

EasyDUAL™ 1B IGBT Modules

Infineon Technologies EasyDUAL™ 1B IGBT Modules with CoolSiC™ MOSFETs deliver very low stray inductance and outstanding efficiency enabling higher frequencies, increased power density, and reduced cooling requirements. The 1200V, 8mΩ half-bridge modules feature an integrated NTC temperature sensor and PressFIT contact technology. Thermal interface material is available on the xHP_B11 variants. These devices feature 0 to 5V and +15V to +18V recommended gate drive voltage ranges, maximum gate-source voltages of +23V or -10V, and 17mΩ or 33mΩ drain-source on resistance options. Integrated mounting clamps provide rugged mounting assurance.