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FF55MR12W1M1HB11BPSA1

Name: Infineon FF55MR12W1M1HB11BPSA1
Brand: Infineon Technologies
SKU: 726-FF55MR12W1M1HB11
Price: 692195 IDR
Availability: InStock

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Mouser No:

726-FF55MR12W1M1HB11

Mfr. No:

FF55MR12W1M1HB11BPSA1

Mfr.:

Infineon Technologies

Description:

Discrete Semiconductor Modules CoolSiC MOSFET halfbridge module 1200 V

Datasheet:

FF55MR12W1M1HB11BPSA1 Datasheet (PDF)

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In Stock: 36

Stock:: 36 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp692.195	Rp692.195
	Rp469.841	Rp4.698.410
	Rp454.614	Rp54.553.680
504	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Discrete Semiconductor Modules
RoHS:
Type:	Half Bridge
Technology:	Si
Series:	M1H
Packaging:	Tray
Brand:	Infineon Technologies
Product Type:	Discrete Semiconductor Modules
Factory Pack Quantity:	24
Subcategory:	Discrete Semiconductor Modules
Tradename:	EasyDUAL CoolSiC
Part # Aliases:	FF55MR12W1M1H_B11 SP005634439

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Datasheet

FF55MR12W1M1HB11BPSA1 Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

EasyDUAL™ 1B IGBT Modules

Infineon Technologies EasyDUAL™ 1B IGBT Modules with CoolSiC™ MOSFETs deliver very low stray inductance and outstanding efficiency enabling higher frequencies, increased power density, and reduced cooling requirements. The 1200V, 8mΩ half-bridge modules feature an integrated NTC temperature sensor and PressFIT contact technology. Thermal interface material is available on the xHP_B11 variants. These devices feature 0 to 5V and +15V to +18V recommended gate drive voltage ranges, maximum gate-source voltages of +23V or -10V, and 17mΩ or 33mΩ drain-source on resistance options. Integrated mounting clamps provide rugged mounting assurance.

1200V CoolSiC™ M1H Modules

Infineon Technologies 1200V CoolSiC™ M1H Modules offer EV Charging and other inverter designers opportunities to achieve never-before-seen efficiency and power density levels.