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FS150R12N2T7B54BPSA1

Name: Infineon FS150R12N2T7B54BPSA1
Brand: Infineon Technologies
SKU: 726-FS150R12N2T7B54B
Price: 1693519 IDR
Availability: InStock

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Mouser No:

726-FS150R12N2T7B54B

Mfr. No:

FS150R12N2T7B54BPSA1

Mfr.:

Infineon Technologies

Description:

IGBT Modules 1200 V, 150 A sixpack IGBT module

Datasheet:

FS150R12N2T7B54BPSA1 Datasheet (PDF)

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In Stock: 39

Stock:: 39 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp1.693.519	Rp1.693.519
	Rp1.655.176	Rp16.551.760
	Rp1.377.968	Rp144.686.640

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
Product:	IGBT Silicon Modules
Configuration:	6-Pack
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.55 V
Continuous Collector Current at 25 C:	150 A
Gate-Emitter Leakage Current:	100 nA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tray
Brand:	Infineon Technologies
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Through Hole
Product Type:	IGBT Modules
Factory Pack Quantity:	15
Subcategory:	IGBTs
Technology:	Si
Part # Aliases:	FS150R12N2T7_B54 SP005546346

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Datasheet

FS150R12N2T7B54BPSA1 Datasheet (PDF)

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CAHTS:: 8541210000
USHTS:: 8541210095
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

1200V Sixpack IGBT Modules

Infineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.