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FS3L100R07W3S5B11BPSA1

Name: Infineon FS3L100R07W3S5B11BPSA1
Brand: Infineon Technologies
SKU: 726-S3L100R07W3S5B11
Price: 1565648 IDR
Availability: OutOfStock

Mouser No:

726-S3L100R07W3S5B11

Mfr. No:

FS3L100R07W3S5B11BPSA1

Mfr.:

Infineon Technologies

Description:

IGBT Modules 650 V, 100 A sixpack IGBT module

Datasheet:

FS3L100R07W3S5B11BPSA1 Datasheet (PDF)

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Factory Lead Time:: 10 Weeks Estimated factory production time.

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Qty.	Unit Price	Ext. Price
	Rp1.565.648	Rp1.565.648
	Rp1.253.949	Rp10.031.592
5.000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:
Product:	IGBT Silicon Modules
Configuration:	6-Pack
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.17 V
Continuous Collector Current at 25 C:	70 A
Gate-Emitter Leakage Current:	100 nA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	Infineon Technologies
Product Type:	IGBT Modules
Factory Pack Quantity:	8
Subcategory:	IGBTs
Technology:	Si
Tradename:	EasyPACK
Part # Aliases:	FS3L100R07W3S5_B11 SP003177028

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Datasheet

FS3L100R07W3S5B11BPSA1 Datasheet (PDF)

Product Catalogs

CNHTS:: 8504409100
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

1200V Sixpack IGBT Modules

Infineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.