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IGD70R140D2SAUMA1

Name: Infineon IGD70R140D2SAUMA1
Brand: Infineon Technologies
SKU: 726-IGD70R140D2SAUMA
Price: 49167 IDR
Availability: InStock

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Mouser No:

726-IGD70R140D2SAUMA

Mfr. No:

IGD70R140D2SAUMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs CoolGaN Transistor 700 V G5

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGD70R140D2SAUMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IGD70R140D2SAUMA1

In Stock: 1.792

Stock:: 1.792 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp49.167	Rp49.167
	Rp31.739	Rp317.390
	Rp22.566	Rp2.256.600
	Rp18.896	Rp9.448.000
	Rp16.291	Rp16.291.000
Full Reel (Order in multiples of 2500)
	Rp14.695	Rp36.737.500
	Rp14.420	Rp72.100.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	700 V
Vgs - Gate-Source Voltage:	- 10 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	1.9 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	29 W
Channel Mode:	Enhancement
Tradename:	CoolGaN
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	23 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	Transistors
Product Type:	GaN FETs
Rise Time:	7 ns
Series:	CoolGaN G5
Factory Pack Quantity:	2500
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Type:	CoolGaN Transistor
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	IGD70R140D2S SP006085341

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Datasheet

IGD70R140D2SAUMA1 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

700V CoolGaN™ G5 Power Transistors

Infineon Technologies 700V CoolGaN™ G5 Power Transistors represent a significant advancement in power conversion technology. These gallium nitride (GaN) transistors are designed to operate at high frequencies with superior efficiency, enabling ultra-fast switching and minimizing energy losses. The 700V CoolGaN G5 series features enhancement-mode transistors that are normally off, ensuring safe operation and high reliability. With low gate and output charge, these transistors support high power density designs and reduce system BOM costs.