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IMCQ120R078M2HXTMA1

Name: Infineon IMCQ120R078M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMCQ120R078M2HXT
Price: 169517 IDR
Availability: InStock

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Mouser No:

726-IMCQ120R078M2HXT

Mfr. No:

IMCQ120R078M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMCQ120R078M2HXTMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IMCQ120R078M2HXTMA1

In Stock: 869

Stock:: 869 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp169.517	Rp169.517
	Rp119.249	Rp1.192.490
	Rp96.500	Rp9.650.000
	Rp85.676	Rp42.838.000
Full Reel (Order in multiples of 750)
	Rp75.952	Rp56.964.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PG-HDSOP-22-U03
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	205 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	5.1 V
Qg - Gate Charge:	23.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	176 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4.8 ns
Forward Transconductance - Min:	3 S
Packaging:	Reel
Packaging:	Cut Tape
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	3.2 ns
Series:	1200 V G2
Factory Pack Quantity:	750
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	11.7 ns
Typical Turn-On Delay Time:	5 ns
Part # Aliases:	IMCQ120R078M2H SP005974971

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Datasheet

IMCQ120R078M2HXTMA1 Datasheet (PDF)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage V_GS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.