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IPB120P04P404ATMA2

Name: Infineon IPB120P04P404ATMA2
Brand: Infineon Technologies
SKU: 726-IPB120P04P404ATM
Price: 72100 IDR
Availability: InStock

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Mouser No:

726-IPB120P04P404ATM

Mfr. No:

IPB120P04P404ATMA2

Mfr.:

Infineon Technologies

Description:

MOSFETs MOSFET_(20V 40V)

Datasheet:

IPB120P04P404ATMA2 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPB120P04P404ATMA2

In Stock: 4.942

Stock:: 4.942 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp72.100	Rp72.100
	Rp47.149	Rp471.490
	Rp33.023	Rp3.302.300
	Rp27.152	Rp13.576.000
Full Reel (Order in multiples of 1000)
	Rp25.317	Rp25.317.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	2.9 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	158 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	136 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Fall Time:	52 ns
Product Type:	MOSFETs
Rise Time:	20 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	49 ns
Typical Turn-On Delay Time:	30 ns
Part # Aliases:	IPB120P04P4-04 SP002325758 IPB120P04P404ATMA1 SP000842270
Unit Weight:	324 mg

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Datasheet

IPB120P04P404ATMA2 Datasheet (PDF)

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

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Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

OptiMOS®-P2 Automotive MOSFETs

Infineon Technologies OptiMOS®-P2 Automotive MOSFETs offers a comprehensive portfolio of P-channel automotive power MOSFETs with the technology of OptiMOS-P2 and Gen5. The Automotive MOSFETs are AEC qualified and supports a 175°C operating temperature. The Infineon OptiMOS-P2 Automotive MOSFETs are available in DPAK, D2PAK, TO220, TO262, and SO8 packages.