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IPD60R650CEAUMA1

Name: Infineon IPD60R650CEAUMA1
Brand: Infineon Technologies
SKU: 726-IPD60R650CEAUMA1
Price: 24033 IDR
Availability: Discontinued

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See Product Specifications

Mouser No:

726-IPD60R650CEAUMA1

Mfr. No:

IPD60R650CEAUMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs CONSUMER

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IPD60R650CEAUMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IPD60R650CEAUMA1

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 2.462

Expected 03/09/2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp24.033	Rp24.033
	Rp15.062	Rp150.620
	Rp9.925	Rp992.500
	Rp7.724	Rp3.862.000
	Rp7.008	Rp7.008.000
Full Reel (Order in multiples of 2500)
	Rp6.219	Rp15.547.500
	Rp5.577	Rp27.885.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	9.9 A
Rds On - Drain-Source Resistance:	540 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	20.5 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	82 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	11 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	CoolMOS CE
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	IPD60R650CE SP001396884
Unit Weight:	330 mg

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Datasheet

IPD60R650CEAUMA1 Datasheet (PDF)

Application Notes

Models

Product Catalogs

Technical Resources

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

CoolMOS™ CE Power MOSFETs

Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost-optimized to meet typical requirements in consumers with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

600V/650V CoolMOS™ CE N-Ch Power MOSFETs

Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.