+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IPDD60R180CM8XTMA1

Name: Infineon IPDD60R180CM8XTMA1
Brand: Infineon Technologies
SKU: 726-IPDD60R180CM8XTM
Price: 51185 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IPDD60R180CM8XTM

Mfr. No:

IPDD60R180CM8XTMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs HIGH POWER_NEW

Datasheet:

IPDD60R180CM8XTMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IPDD60R180CM8XTMA1

In Stock: 1.515

Stock:: 1.515 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 25 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp51.185	Rp51.185
	Rp33.023	Rp330.230
	Rp22.749	Rp2.274.900
	Rp19.080	Rp9.540.000
	Rp17.319	Rp17.319.000
Full Reel (Order in multiples of 1700)
	Rp16.878	Rp28.692.600

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HDSOP-10
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	21 A
Rds On - Drain-Source Resistance:	180 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.7 V
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	169 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	12.8 ns
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	600V CM8
Factory Pack Quantity:	1700
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	88.4 ns
Typical Turn-On Delay Time:	17.2 ns
Part # Aliases:	IPDD60R180CM8 SP005578049

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IPDD60R180CM8XTMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

CoolMOS™ 8 SJ MOSFETs

Infineon Technologies CoolMOS™ 8 SJ MOSFETs are high-voltage super-junction MOSFET technology solutions. The Infineon Technologies CoolMOS 8 has an integrated fast body diode and is ideal for diverse applications. The CoolMOS 8 enhances Infineon's wide-bandgap (WBG) portfolio as the successor to the 600V CoolMOS 7 MOSFET family.