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IQDH29NE2LM5CGATMA1

Name: Infineon IQDH29NE2LM5CGATMA1
Brand: Infineon Technologies
SKU: 726-IQDH29NE2LM5CGAT
Price: 55955 IDR
Availability: InStock

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Mouser No:

726-IQDH29NE2LM5CGAT

Mfr. No:

IQDH29NE2LM5CGATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 15V-30V

Datasheet:

IQDH29NE2LM5CGATMA1 Datasheet (PDF)

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In Stock: 3.977

Stock:: 3.977 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp55.955	Rp55.955
	Rp38.527	Rp385.270
	Rp33.206	Rp3.320.600
	Rp31.922	Rp79.805.000
Full Reel (Order in multiples of 5000)
	Rp31.005	Rp155.025.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TTFN-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	789 A
Rds On - Drain-Source Resistance:	290 uOhms
Vgs - Gate-Source Voltage:	- 16 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	88 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	333 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	19 ns
Forward Transconductance - Min:	305 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	OptiMOS 5
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	77 ns
Typical Turn-On Delay Time:	14 ns
Part # Aliases:	IQDH29NE2LM5CG SP005408851

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Datasheet

IQDH29NE2LM5CGATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
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