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ISC009N06NM6ATMA1

Name: Infineon ISC009N06NM6ATMA1
Brand: Infineon Technologies
SKU: 726-ISC009N06NM6ATMA
Price: 110259 IDR
Availability: InStock

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Mouser No:

726-ISC009N06NM6ATMA

Mfr. No:

ISC009N06NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 6 Power Transistor, 60 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC009N06NM6ATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies ISC009N06NM6ATMA1

In Stock: 2.495

Stock:: 2.495 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp110.259	Rp110.259
	Rp72.100	Rp721.000
	Rp53.203	Rp5.320.300
	Rp47.149	Rp23.574.500
	Rp41.645	Rp41.645.000
	Rp39.811	Rp99.527.500
Full Reel (Order in multiples of 5000)
	Rp37.976	Rp189.880.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	344 A
Rds On - Drain-Source Resistance:	900 uOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.3 V
Qg - Gate Charge:	97 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	221 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	8.5 ns
Forward Transconductance - Min:	110 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	OptiMOS 6
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32.9 ns
Typical Turn-On Delay Time:	13.5 ns
Part # Aliases:	ISC009N06NM6 SP005570342

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Datasheet

ISC009N06NM6ATMA1 Datasheet (PDF)

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

OptiMOS™ 6 60V Power MOSFETs

Infineon Technologies OptiMOS™ 6 60V Power MOSFETs deliver superior performance via robust power MOSFET technology. The OptiMOS 60V Power MOSFETs provide >37% lower R_DS(on) and ~25% higher FOM_Qg x R_DS(on) performance than OptiMOS 5. The Infineon OptiMOS 6 60V Power MOSFETs offer higher system efficiency and power density in soft-switching topologies and low-frequency applications.

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.