It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

ISC034N08NM7ATMA1

Name: Infineon ISC034N08NM7ATMA1
Brand: Infineon Technologies
SKU: 726-ISC034N08NM7ATMA
Price: 51736 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-ISC034N08NM7ATMA

Mfr. No:

ISC034N08NM7ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 PowerTransistor, 80 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC034N08NM7ATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies ISC034N08NM7ATMA1

In Stock: 2.343

Stock:: 2.343

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 10.000

Expected 13/08/2026
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp51.736	Rp51.736
	Rp33.390	Rp333.900
	Rp22.933	Rp2.293.300
	Rp18.529	Rp9.264.500
	Rp17.319	Rp17.319.000
	Rp16.713	Rp41.782.500
Full Reel (Order in multiples of 5000)
	Rp16.163	Rp80.815.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	122 A
Rds On - Drain-Source Resistance:	3.4 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	34 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	115 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	3.4 ns
Forward Transconductance - Min:	50 S
Product Type:	MOSFETs
Rise Time:	2.5 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13.8 ns
Typical Turn-On Delay Time:	8.6 ns
Part # Aliases:	ISC034N08NM7 SP006167256

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

ISC034N08NM7ATMA1 Datasheet (PDF)

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

N-Channel OptiMOS™ 7 80V Power MOSFETs

Infineon Technologies N-channel OptiMOS™ 7 80V Power MOSFETs are N-channel, normal level devices with superior thermal resistance. The OptiMOS 7 80V Power MOSFET series offers a soft-recovery body diode and is rated to 175°C. The Infineon OptiMOS 7 80V Power MOSFETs are available in a PG‑TDSON‑8 package and are optimized for motor drives and synchronous rectification applications.

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOM_oss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.