It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

ISC080N10NM6ATMA1

Name: Infineon ISC080N10NM6ATMA1
Brand: Infineon Technologies
SKU: 726-ISC080N10NM6ATMA
Price: 42379 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-ISC080N10NM6ATMA

Mfr. No:

ISC080N10NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >80 - 100V

Datasheet:

ISC080N10NM6ATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies ISC080N10NM6ATMA1

In Stock: 200

Stock:: 200

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 15.000

Expected 13/08/2026
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp42.379	Rp42.379
	Rp26.602	Rp266.020
	Rp18.713	Rp1.871.300
	Rp16.273	Rp8.136.500
	Rp14.879	Rp14.879.000
	Rp14.108	Rp35.270.000
Full Reel (Order in multiples of 5000)
	Rp12.218	Rp61.090.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	75 A
Rds On - Drain-Source Resistance:	8.05 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.3 V
Qg - Gate Charge:	19 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Product Type:	MOSFETs
Series:	ISC080N10
Factory Pack Quantity:	5000
Subcategory:	Transistors
Part # Aliases:	ISC080N10NM6 SP005409473

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

ISC080N10NM6ATMA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.

OptiMOS™ 6 100V Power MOSFETs

Infineon Technologies OptiMOS™ 6 100V Power MOSFETs are offered in SuperSO8 and PQFN 3.3 x 3.3 packages, while optimized for high-switching-frequency applications such as telecom and solar, where losses are associated with charges (switching) and on-state resistance (conduction). Additionally, due to the best-in-class R_DS(on) and wider safe operating area (SOA), the device is also ideal for battery-powered applications (BPA) and battery management systems (BMS).