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ISG0614N06NM5HATMA1

Name: Infineon ISG0614N06NM5HATMA1
Brand: Infineon Technologies
SKU: 726-ISG0614N06NM5HAT
Price: 85676 IDR
Availability: InStock

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Mouser No:

726-ISG0614N06NM5HAT

Mfr. No:

ISG0614N06NM5HATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 60V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISG0614N06NM5HATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies ISG0614N06NM5HATMA1

In Stock: 3.011

Stock:: 3.011 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp85.676	Rp85.676
	Rp59.625	Rp596.250
	Rp42.563	Rp4.256.300
	Rp37.426	Rp18.713.000
	Rp36.142	Rp36.142.000
Full Reel (Order in multiples of 3000)
	Rp32.656	Rp97.968.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TFN-10
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	233 A
Rds On - Drain-Source Resistance:	1.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.3 V
Qg - Gate Charge:	68 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Dual
Fall Time:	6.8 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	8.7 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	18 ns
Part # Aliases:	ISG0614N06NM5H SP005575180

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Datasheet

ISG0614N06NM5HATMA1 Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
Learn More