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ISG0616N10NM5HSCATMA1

Name: Infineon ISG0616N10NM5HSCATMA1
Brand: Infineon Technologies
SKU: 726-ISG0616N10NM5HSC
Price: 89712 IDR
Availability: InStock

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Mouser No:

726-ISG0616N10NM5HSC

Mfr. No:

ISG0616N10NM5HSCATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >80 - 100V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISG0616N10NM5HSCATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies ISG0616N10NM5HSCATMA1

In Stock: 2.977

Stock:: 2.977 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp89.712	Rp89.712
	Rp69.164	Rp691.640
	Rp49.718	Rp4.971.800
	Rp48.433	Rp24.216.500
	Rp45.865	Rp45.865.000
Full Reel (Order in multiples of 3000)
	Rp39.444	Rp118.332.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TFN-10
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	139 A
Rds On - Drain-Source Resistance:	4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	52 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Dual
Fall Time:	7.8 ns
Forward Transconductance - Min:	55 S
Product Type:	MOSFETs
Rise Time:	10 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	16 ns
Part # Aliases:	ISG0616N10NM5HSC SP005754001

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Datasheet

ISG0616N10NM5HSCATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
Learn More