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S29GL01GS10DHI010

Name: Infineon S29GL01GS10DHI010
Brand: Infineon Technologies
SKU: 797-S29GL01GS10DHI01
Price: 312799 IDR
Availability: InStock

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Mouser No:

797-S29GL01GS10DHI01

Mfr. No:

S29GL01GS10DHI010

Mfr.:

Infineon Technologies

Description:

NOR Flash 1G 3V 100ns Parallel NOR Flash

Datasheet:

S29GL01GS10DHI010 Datasheet (PDF)

ECAD Model:

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In Stock: 619

Stock:: 619 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp312.799	Rp312.799
	Rp292.435	Rp2.924.350
	Rp283.813	Rp7.095.325
	Rp278.859	Rp13.942.950
	Rp273.906	Rp27.390.600
	Rp264.549	Rp66.137.250
	Rp248.772	Rp129.361.440
1.040	Quote

Alternative Packaging

Mfr. Part No.:

S29GL01GS10DHI013

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp298.489

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	NOR Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	FBGA-64
Series:	S29GL01G/512/256/128S
Memory Size:	1 Gbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	60 mA
Interface Type:	Parallel
Organisation:	64 M x 16
Data Bus Width:	16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	TH
Country of Diffusion:	CN
Country of Origin:	CN
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	100 ns
Factory Pack Quantity:	520
Subcategory:	Memory & Data Storage
Tradename:	MirrorBit
Unit Weight:	8,455 g

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Datasheet

S29GL01GS10DHI010 Datasheet (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

CNHTS:: 8542329000
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
TARIC:: 8542326100
MXHTS:: 8542320299
ECCN:: 3A991.b.1.a

S29 GL-S MIRRORBIT™ Eclipse™ Flash

Infineon Technologies S29 GL-S MIRRORBIT™ Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MIRRORBIT Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. Infineon S29 GL-S MIRRORBIT Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.