PXAE263708NB-V1-R0

MACOM
941-PXAE263708NBV1R0
PXAE263708NB-V1-R0

Mfr.:

Description:
RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz

Datasheet:
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Learn more about MACOM PXAE263708NB-V1-R0

Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 50   Multiples: 50
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 50)
Rp1.220.743 Rp61.037.150
Rp1.067.921 Rp106.792.100
1.000 Quote

Alternative Packaging

Mfr. Part No.:
PXAE263708NB-V1-R2
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp2.164.461
Min:
1

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: RF MOSFET Transistors
RoHS:  
N-Channel
Si
65 V
80 mOhms
2.62 GHz to 2.69 GHz
13.5 dB
400 W
+ 225 C
Screw Mount
HB2SOF-8-1
Reel
Brand: MACOM
Number of Channels: 1 Channel
Product Type: RF MOSFET Transistors
Factory Pack Quantity: 50
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: - 6 V to + 10 V
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
USHTS:
8541290055
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications. 

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