MSC030SDA120K

Microchip Technology
494-MSC030SDA120K
MSC030SDA120K

Mfr.:

Description:
SiC Schottky Diodes SIC SBD 1200 V 30 A TO-220
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In Stock: 862

Stock:
862 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp189.514 Rp189.514
Rp187.863 Rp1.878.630
Rp172.819 Rp4.320.475
Rp171.352 Rp17.135.200
Rp169.334 Rp42.333.500
Rp167.316 Rp83.658.000
Rp156.124 Rp156.124.000
5.000 Quote

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220FP-2
Single
30 A
1.2 kV
1.5 V
165 A
200 uA
- 55 C
+ 175 C
MSC0
Tube
Brand: Microchip Technology
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
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Compliance Codes
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

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