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MSC035SMA070B4

Name: Microchip MSC035SMA070B4
Brand: Microchip Technology
SKU: 494-MSC035SMA070B4
Price: 184377 IDR
Availability: InStock

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Mouser No:

494-MSC035SMA070B4

Mfr. No:

MSC035SMA070B4

Mfr.:

Microchip Technology

Description:

SiC MOSFETs FG, SIC MOSFET, TO-247 4-LEAD

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Datasheet:

MSC035SMA070B4 Datasheet (PDF)

ECAD Model:

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Learn more about Microchip Technology MSC035SMA070B4

In Stock: 982

Stock:: 982 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp184.377	Rp184.377
	Rp172.452	Rp1.724.520
	Rp162.912	Rp4.887.360
	Rp158.143	Rp161.305.860

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	77 A
Rds On - Drain-Source Resistance:	44 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Qg - Gate Charge:	99 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	283 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Fall Time:	52 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	9 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	10 ns
Unit Weight:	6 g

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Datasheet

MSC035SMA070B4 Datasheet (PDF)

DTS

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: United States
Country of Diffusion:: United States

The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.