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MSC100SM70JCU2

Name: Microchip MSC100SM70JCU2
Brand: Microchip Technology
SKU: 494-MSC100SM70JCU2
Price: 915832 IDR
Availability: OutOfStock

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Mouser No:

494-MSC100SM70JCU2

Mfr. No:

MSC100SM70JCU2

Mfr.:

Microchip Technology

Description:

Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227

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Datasheet:

MSC100SM70JCU2 Datasheet (PDF)

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Learn more about Microchip Technology MSC100SM70JCU2

Availability

Stock:: 0

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp915.832	Rp915.832

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	MOSFET-SiC SBD Modules
Type:	MOSFET / SiC SBD
Technology:	SiC
Vf - Forward Voltage:	1.5 V
Vr - Reverse Voltage:	700 V
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Mounting Style:	Screw Mount
Package/Case:	SOT-227
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Bulk
Brand:	Microchip Technology
Fall Time:	20 ns
Id - Continuous Drain Current:	124 A
Pd - Power Dissipation:	365 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	19 mOhms
Rise Time:	35 ns
Factory Pack Quantity:	1
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	40 ns
Vds - Drain-Source Breakdown Voltage:	700 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V

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Datasheet

MSC100SM70JCU2 Datasheet (PDF)

DTS

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Compliance Codes

USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.