BUK9R4R5-40HJ

Nexperia
771-BUK9R4R5-40HJ
BUK9R4R5-40HJ

Mfr.:

Description:
MOSFETs BUK9R4R5-40H/SOT8038/MLPAK56

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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Learn more about Nexperia BUK9R4R5-40HJ

In Stock: 169

Stock:
169 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp24.033 Rp24.033
Rp14.952 Rp149.520
Rp12.714 Rp635.700
Rp9.797 Rp979.700
Rp8.164 Rp2.041.000
Rp6.311 Rp3.155.500
Rp5.724 Rp5.724.000
Full Reel (Order in multiples of 3000)
Rp4.953 Rp14.859.000
Rp4.568 Rp27.408.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
MLPAK56-WF-8
N-Channel
1 Channel
40 V
91 A
4.5 mOhms
20 V
2.15 V
36 nC
- 55 C
+ 175 C
71 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Nexperia
Configuration: Single
Fall Time: 14 ns
Product Type: MOSFETs
Rise Time: 24 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 16 ns
Part # Aliases: 934670276118 934670276118, BXK9R4R5-40HJ
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Attributes selected: 0

Datasheet

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

BUK9Q N-Channel Trench MOSFET

Nexperia BXK9Q29-60A N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) SMD plastic package using Trench MOSFET technology. This N-channel MOSFET is logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C. The BXK9Q29-60A trench MOSFET features a 60V maximum drain-source voltage, 84A maximum peak drain current, and 27W maximum total power dissipation. This N-channel MOSFET also features a 23.7mΩ typical drain-source on-state resistance, 25mJ maximum non-repetitive drain-source avalanche energy, and 15.8A maximum non-repetitive avalanche current. The BXK9Q29-60A trench MOSFET is EU/CN RoHS-compliant. Typical applications include LED lighting, switching circuits, and DC-DC conversion.

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