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PSMN1R8-30MLHX

Name: Nexperia PSMN1R8-30MLHX
Brand: Nexperia
SKU: 771-PSMN1R8-30MLHX
Price: 36875 IDR
Availability: InStock

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Mouser No:

771-PSMN1R8-30MLHX

Mfr. No:

PSMN1R8-30MLHX

Mfr.:

Nexperia

Description:

MOSFETs SOT1210 N-CH 30V 150A

Datasheet:

PSMN1R8-30MLHX Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PSMN1R8-30MLHX

In Stock: 4.535

Stock:: 4.535 Can Dispatch Immediately

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Factory Lead Time:: 10 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp36.875	Rp36.875
	Rp22.749	Rp227.490
	Rp16.952	Rp847.600
	Rp15.117	Rp1.511.700
	Rp13.723	Rp6.861.500
Full Reel (Order in multiples of 1500)
	Rp8.311	Rp12.466.500
	Rp7.669	Rp23.007.000
	Rp7.338	Rp33.021.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-33-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	150 A
Rds On - Drain-Source Resistance:	2.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	106 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Single
Fall Time:	14 ns
Product Type:	MOSFETs
Rise Time:	23 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	14 ns
Part # Aliases:	934660529115
Unit Weight:	42,600 mg

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Datasheet

PSMN1R8-30MLHX Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

CNHTS:: 8541290000
USHTS:: 8542390090
TARIC:: 8541290000
ECCN:: EAR99

PSMN N-Channel 30V MOSFETs

Nexperia PSMN N-Channel 30V MOSFETs feature NextPowerS3 technology that delivers low R_DSon and low I_DSS leakage in an LFPAK package. The LFPAK package provides high reliability and is qualified for 175°C. These MOSFETs include best-in-class Safe Operating Area (SOA). The PSMN MOSFETs have low leakage of less than 1μA at 25°C and are optimized for 4.5V gate drive. These MOSFETs feature -55°C to 175°C, both junction temperature and storage temperature. The Nexperia PSMN MOSFETs are ideal for hot-swap, power OR-ing, battery protection, brushed and BLDC motor control, and synchronous rectification in AC-DC and DC-DC applications.

NextPowerS3 MOSFETs

Nexperia NextPowerS3 MOSFETs are a high-performance 25V, 30V, and 40V MOSFET platform incorporating Nexperia superjunction technology. Nexperia NextPowerS3 devices are offered in a copper-clip LFPAK package, delivering low R_DS(on) and demonstrating a continuous current capability up to 380A. Synchronous working parameters allow NextPowerS3 MOSFETs to provide high performance and high reliability.