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QPD1015

Name: Qorvo QPD1015
Brand: Qorvo
SKU: 772-QPD1015
Price: 6119308 IDR
Availability: InStock

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Mouser No:

772-QPD1015

Mfr. No:

QPD1015

Mfr.:

Qorvo

Description:

GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN

Datasheet:

QPD1015 Datasheet

ECAD Model:

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More Information

Learn more about Qorvo QPD1015

In Stock: 25

Stock:: 25 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp6.119.308	Rp6.119.308
	Rp5.652.403	Rp56.524.030
	Rp5.065.698	Rp126.642.450

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	NI-360
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Id - Continuous Drain Current:	2.5 A
Vgs th - Gate-Source Threshold Voltage:	- 2.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	64 W
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1015PCB401
Gain:	20 dB
Maximum Operating Frequency:	3.7 GHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Output Power:	70 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	QPD1015
Factory Pack Quantity:	25
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Vgs - Gate-Source Breakdown Voltage:	145 V

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Datasheet

QPD1015 Datasheet

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Compliance Codes

CNHTS:: 8504409190
CAHTS:: 8542390000
USHTS:: 8542390090
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.