TGS2352-2-SM

Qorvo
772-TGS2352-2-SM
TGS2352-2-SM

Mfr.:

Description:
RF Switch ICs .5-12GHz SPDT GaN IL < 1dB

ECAD Model:
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In Stock: 94

Stock:
94 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp3.348.695 Rp3.348.695
Rp2.513.769 Rp62.844.225
100 Quote

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Switch ICs
RoHS:  
SPDT
500 MHz
12 GHz
1 dB
35 dB
- 40 C
+ 85 C
SMD/SMT
QFN-22
Si
TGS2352
Waffle
Brand: Qorvo
High Control Voltage: 0 V
Moisture Sensitive: Yes
Number of Switches: Single
Off Time - Max: 18 ns
On Time - Max: 31 ns
Pd - Power Dissipation: 5 W
Product Type: RF Switch ICs
Factory Pack Quantity: 50
Subcategory: Wireless & RF Integrated Circuits
Part # Aliases: TGS2352 1075674
Unit Weight: 9,245 g
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CNHTS:
8542399000
CAHTS:
8542330000
USHTS:
8542330001
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
8542330201
ECCN:
EAR99

TriQuint GaN Solutions

TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.
Learn More

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.